PART |
Description |
Maker |
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI Advanced Semiconductor, Inc.
|
FME-230A |
Schottky Barrier Diode - 90V/100V 100V, 30A Schottky barrier diode in TO220F package 100V/ 30A Schottky barrier diode in TO220F package CRYSTAL 20.000000 MHZ SMD 8PF
|
SANKEN[Sanken electric] Sanken Electric Co.,Ltd.
|
FMB-2306 |
30A Schottky barrier diode in TO220F package Schottky Barrier Diode - 60V
|
Sanken Electric Co.,Ltd. SANKEN[Sanken electric]
|
CBS05F30 CBS05F30-14 |
Schottky Barrier Diode Silicon Epitaxial Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
5082-2300 1N5712 5082-2835 5082-2900 1N5711 5082-2 |
Schottky Barrier Diode for General Purpose Applications Schottky Barrier Diodes for General Purpose Applications Rectifier Diode, Schottky Diode, Single, 8V, Outline 15, 2-Pin TV 53C 53#20 PIN PLUG RECP
|
http:// Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Agilent / Hewlett-Packard
|
BAT54SDW BAT54CDW BAT54ADW BAT54BRW-TP BAT54SDW-TP |
200mWatt, 30Volt Schottky Barrier Diode DIODE SCHOTTKY 200MW 30V SOT363 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
CDBQR00340-HF12 CDBQR00340-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.03A SMD Schottky Barrier Diode
|
Comchip Technology
|
HSB88WA |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|